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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4370 DESCRIPTION *High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) *Complement to Type 2SA1659 *Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS *Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 160 V 160 V 5.0 V 1.5 A 0.15 A 20 W .cn mi e IC(DC) Collector Current(DC) IB(DC) Base Current Collector Power Dissipation @TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4370 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 5V 1.0 V A ICBO Collector Cutoff Current VCB= 160V ; IE= 0 1.0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 A hFE DC Current Gain IC= 100mA ; VCE= 5V COB Output Capacitance fT Current-Gain--Bandwidth Product hFE Classifications O 70-140 Y 120-240 w w scs .i w IE= 0 ; VCB= 10V;f= 1.0MHz IC= 100m A ; VCE= 10V .cn mi e 70 240 25 pF 100 MHz isc Websitewww.iscsemi.cn 2 |
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